NYU physics part of $6.25 million US Department of Defense grant for nanotechnology research

Targeted device concepts include seamless integration of memory and logic, high-speed magneto-optical modulators for optical communications and switching, reconfigurable logic devices, and new sensing capabilities. The use of electron-spin-mediated coupling is expected to permit the design of devices that operate at much higher speeds than current electronic devices and at the same time use considerably less power.

In 2007, the U.S. Department of Defense awarded a team of nine scholars from six universities—including Kent and Nadrian Seeman from NYU’s Chemistry Department—a grant of $6 million over five years to exploit precise biological assembly techniques for the study of quantum physics in nanoparticle arrays. This research will produce a fundamental understanding of quantum electronic systems, which could have an impact on the development and understanding of future electronics.

Kent and his research team at NYU have recently developed a new form of non-volatile memory known as magnetoresistive random access memory, or MRAM, which will provide non-volatile storage of frequently updated, critical data, and instant-on convenience—that is, enable computers and other electronic devices to turn on in the blink of an eye. NYU’s MRAM technology may provide a more efficient and reliable type of non-volatile storage, which is computer memory retained even when a device is turned off, such as in USB flash drives, magnetic computer storage devices, and smart cards.

The technology is being commercialized by a new start-up company formed by Allied Minds, a Boston-based seed investment corporation. The new company, Spin Transfer Technologies (STT), LLC, was announced in December 2007.